Dynamics of Voltage-Driven Self-Sustained Oscillations in NdNiO<sub>3</sub> Neuristors
نویسندگان
چکیده
Active memristor elements, also called neuristors, are self-oscillating devices that very good approximations to biological neuronal functionality and crucial the development of low-power neuromorphic hardware. Materials showing conduction mechanisms depend superlinearly on temperature can lead negative differential resistance (NDR) regimes, which may further be engineered as self-oscillators. Thermal runaway effects or insulator-to-metal phase transitions (IMTs) such superlinearity being extensively studied in systems TaOx, NbOx, VO2. However, ReNiO3 offer large tunability metal–insulator transition temperatures less explored so far. Here, we demonstrate all-or-nothing neuron-like self-oscillations at MHz frequency low thin films NdNiO3, a model charge-transfer insulator, their coding behavior. We study dependence NDR show it vanishes even below IMT temperature. threshold voltages scale with device size simple electrothermal captures all these salient features. In contrast existing models, our correctly predicts independence oscillation amplitude applied voltage, offering insights about nature fixed points region, dynamics non-linear oscillations them.
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ژورنال
عنوان ژورنال: ACS applied electronic materials
سال: 2023
ISSN: ['2637-6113']
DOI: https://doi.org/10.1021/acsaelm.3c00549